It is no exaggeration to say that the third-generation semiconductor devices have brought innovation to the
Power Supply industry. Based on their high speed, small size, and low power consumption, they are more and more widely used in consumer electronics and power electronics industries. Let's first take a look at the differences between power devices of different technologies. The figure below shows that traditional Si-based IGBTs or MOSFETs are either distributed in the high-voltage and low-speed range, or in the low-voltage and high-speed range. The traditional detection technology on the market can Covers test requirements for device characterization. However, the technology of the third-generation semiconductor device SiC or GaN tends to mature, because of its high speed, high withstand voltage, high temperature resistance, small size, and low power consumption, it is more and more used in power conversion products, which is different from traditional performance. However, Si-based power devices have greatly expanded the distribution range, covering high-voltage and high-speed areas that have never appeared before, which poses a very severe challenge to device testing tools.
This year, SiC and GaN devices will be more and more widely used in the fields of 5G communication power supply, new energy inverter and electric vehicle drive in the new infrastructure released by the country, which brings more opportunities for engineers to design power converter products. Many opportunities have also brought new design challenges.
At present, many engineers use low-side switching characteristics to evaluate devices and design driving circuits in bridge circuit design. Because there is a "ground" reference, it seems that as long as the bandwidth and voltage range are satisfied, it is enough, but in fact, many people ignore it. In fact, the drive and characteristics of the high-voltage side and the low-voltage side are not the same, and the upper-tube test cannot be calculated from the down-tube test, but why don't engineers really test the high-voltage side Vgs? Mainly because there is currently no suitable probe and method to test the accurate high-voltage side drive signal, it will be affected by bandwidth limitation, common mode rejection ratio limitation, signal interference, etc., so it can only be estimated by speculation or simulation, which is very large. To a certain extent, the uncertainty of product design is increased, and there are even great security risks.
APM is a high-tech enterprise integrating independent research and development, production, sales and service. With the test source/load as the core product, we provide a full range of comprehensive solutions and services. Products are widely used in aerospace, new energy, power electronics, intelligent manufacturing, scientific research and education and other related fields.
With many years of profound technical background and production experience, it has comprehensively promoted the localization of precision instruments and sold it globally with its own brand. At the same time, it maintains long-term strategic cooperative relations with domestic and foreign scientific research teams, explores advanced technologies and application frontiers in the field of measurement, and continuously promotes product iteration and innovation, thereby fundamentally ensuring that products and services are in the leading position in the industry. We always adhere to the business philosophy of "professionalism, innovation, brand and service", provide customers with higher added value and services, focus on the field of testing, and strive to become a world-class power electronic testing solution provider, serving the world customer.
